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2016年超硅电子物理，化学和材料研讨会（Symposium ED3—Physics,Chemistry and Materials for Beyond Silicon Electronics）
2016年 超硅电子物理，化学和材料 研讨会
2017/1/13
For more than four decades, silicon has been used as the material to fabricate integrated circuits which are now ubiquitously used in almost all electronic products. Today, the market demands electron...
近日，中国科学技术大学钱逸泰课题组发展了一种低温（200 oC）熔盐体系中还原四氯化硅制备硅纳米材料的方法，将该材料应用于锂离子电池负极材料，展示出了优异的电化学性能。该研究成果以“Preparation of Nanocrystalline Si Starting from SiCl4 at 200...
Electrochemically prepared black silicon for improved photon-to-electron conversion efficiency
Electrochemically prepared black silicon photon-to-electron conversion efficiency
2016/12/2
Black silicon with multiscale texture was prepared by electrochemical etching. To confirm the benefits, we coated it with TiO2 and used it as the photoanode in water splitting, and observed 45% enhanc...
We investigated carrier-relaxation dynamics of femtosecond laser annealed (FLA) polycrystalline silicon (poly-Si). The correlation between morphology and electrical properties of poly-Si after femtose...
Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions
crystalline Si He and H ion implantation surface blistering and exfoliation bubbles growth
2009/8/14
Crystalline n-type Si (100) wafers were implanted at room temperature with
160 keV He ions to a fluence of 5×1016cm－2 or 40 keV H ions to a fluence of 1×1016cm－2, singly or in combination, followed ...
Surface morphology of He-implanted single-crystalline silicon
crystalline silicon He ion implantation He bubble Cavities blisters morphology
2009/8/14
Single-crystalline Si (100) samples were implanted with 30 keV He2+ ions to doses ranging from 2.0×1016 to 2.0×1017ions /cm2 and subsequently thermally annealed at 800℃ for 30min. The morphological ch...