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Hole Mobility in Strained Ge and III-V P-channel Inversion Layers with Self-consistent Valence Subband Structure and High-k Insulators
Ge and III-V high-k hole mobility k.p strained p-channel valence subband structure
2014/11/7
We present a comprehensive investigation of the low-ˉeld hole mobility in strained Ge and III-V (GaAs, GaSb, InSb and In1¡xGaxAs) p-channel inversion layers with both SiO2 and high-· insulators. ...
Study on Mechanism of Domain Inversion in LiNbO3 and LiTaO3 and Its Application of Memory -nm Size Domain Inversion by EB Irradiation-
LiNbO3 LiTaO3 Memory
2009/6/8
The ferroelectric large capacity memory that made direction of the spontaneous polarization of domain inversion correspond to binary values of a memory can be considered as one of the new devices adap...
Computer-Aided Numerical Inversion of Laplace Transform
Laplace transform invariant networks linear system
2010/12/9
This paper explores the technique for the computer aided numerical inversion of Laplace transform. The inversion technique is based on the properties of a family of three parameter exponential probabi...