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沉积温度对直流磁控溅射TiN薄膜结构和表面形貌的影响
磁控溅射 锆合金 氮化钛 沉积温度
2018/10/8
利用直流磁控溅射技术,在锆合金基体表面上研究不同基体温度对沉积TiN薄膜的影响.分别采用X射线衍射仪和扫描电子显微镜(SEM)对TiN薄膜结构、表面形貌和截面形貌进行了研究.研究结果表明:TiN薄膜在不同沉积温度下晶格取向是不同的;200 ℃时,TiN为随机取向;300 ℃时,TiN薄膜以(111)为择优取向;400 ℃时,薄膜晶化质量不断提高,最后逐渐趋于稳定.300 ℃时,薄膜的致密性与均匀性...
ANALYSIS OF TIN-STRUCTURE PARAMETER SPACES IN AIRBORNE LASER SCANNER DATA FOR 3-D BUILDING MODEL GENERATION
LIDAR Triangulation Cluster Analysis
2015/6/1
The derived building models were evaluated for their correctness and geometric accuracy. Well-defined building roof planes can be
extracted and reconstructed successfully, while disturbances such as...
为了研究Ti-Si-N薄膜生长过程中界面的形成,采用第一性原理计算了在TiN(001)表面上3N1Ti1Si岛的各构型的总能量和吸附能,并计算了Si-in-3N1Ti构型转向Ti-in-3N1Si构型的两种演变方式所对应的激活能。计算结果表明:在3N1Ti1Si的几种构型中,Ti-in-3N1Si构型是最低能量的稳定结构,这种构型是由SiN相从TiN相中分离出来而形成的;两种演变方式中以Si粒子迁...
Tin isotope analysis of cassiterites from Southeastern and Eastern Asia
MC-ICP-MS tin isotopic variation cassiterite hydroiodic acid
2017/4/11
An analytical technique is presented for isotope analysis of a Sn ore mineral, cassiterite. Hydroiodic acid was used to
successfully decompose the cassiterite samples. An extraction chromatographic m...
Ab-initio calculations for the beta-tin diamond transition in Silicon: comparing theories with experiments
Ab-initio calculations for the beta-tin diamond transition Silicon:
2010/11/19
We investigate the pressure-induced metal-insulator transition from diamond to β-tin in bulk Silicon,using quantum Monte Carlo (QMC) and density functional theory (DFT) approaches. We show
that it is...
Nanopattern-stimulated superconductor-insulator transition in thin TiN films
Nanopattern-stimulated superconductor-insulator transition thin TiN films
2010/11/18
We present the results of the comparative study of the influence of disorder on transport prop-
erties in continuous and nanoperforated TiN films. We show that nanopatterning turns a thin
TiN film i...
We report resonant ultrasound spectroscopy (RUS), dilatometry/magnetostriction, magnetotransport,magnetization, speci c-heat, and 119Sn Mossbauer spectroscopy measurements on SnTe and Sn0:995Cr0:005T...
Thermodynamical insight on the role of additives in shifting the equilibrium between white and grey tin
white tin grey tin Debye temperature equilibrium transition
2010/11/19
In this study methods of statistical thermodynamics were applied to white tin –grey tin equilibrium to find if there is any correlation between Debye temperature of an additive and its effect on the e...
Skyrme-Hartree-Fock Description of the Dipole Strength in Neutron-Rich Tin Isotopes
Skyrme-Hartree-Fock Description Dipole Strength Neutron-Rich Tin Isotopes
2011/1/7
Low-energy E1 strength in neutron-rich 132−164Sn isotopes is analyzed in the framework of the Skyrme random phase approximation (RPA) with different Skyrme forces. A double folding procedure is ...
介绍了中国散裂中子源（CSNS）快循环同步加速器（RCS）中四极陶瓷真空盒内表面镀TiN膜技术与成膜系统装置。采用磁控溅射法，通过在绝缘体长直管道外表面安装金属屏幕罩来提供同轴电场的方法，解决了镀膜均匀性的问题。镀膜样品Ti、N比在0.9~1.1范围内，膜厚为100 nm左右，附着力达到要求，总体满足设计指标，完成了CSNS四极陶瓷真空盒样机的镀膜。
Pairing gap energy correction in Shell model for the neutron-rich tin isotopes
132Sn region Oxbash code Effective interaction
2010/7/8
The region in the vicinity of 132Sn, gathering numerous isotopes of important masses, shows lots of interestsm for explaining the most interesting phenomena. It offers among others the possibility to ...
Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
Thin films ITO ARE
2010/7/8
Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for fi...
不锈钢材料及TiN镀膜处理后PSD测试实验研究
不锈钢材料 TiN薄膜 同步辐射光致解吸 表面处理
2009/8/13
PSD性能是评价电子储存环真空室材料及材料表面处理优劣的一个重要指标. 对一约1.5m长不锈钢管道真空室进行了镀TiN薄膜处理, 并在合肥光源机器研究用光束线(MSB)的PSD实验站上对该真空室在镀TiN薄膜处理前后分别进行了PSD性能测试实验研究. 测试研究结果表明, 镀TiN薄膜处理对于减小不锈钢材料PSD有非常明显的作用.
小体系[Tin-mH2]x(x=－ 1,0,+1) 的几何结构和电子性质
团簇 广义梯度近似 密度泛函理论 密立根占据数
2012/10/9
利用基于广义梯度近似的密度泛函理论,计算了小体系的[Tin– mH2]x(n =2~7;m=0~22; x =－1, 0, +1）团簇.通过分析各原子的密立根占据数(Atomic Mulliken Occupation, AMO), 发现当Ti n-mH2 团簇带电后,团簇中电荷将重新分配,从而导致了团簇中Ti—Ti 和Ti—H 化学键键长发生了明显的变化,并且团簇的几何结构发生了一定的畸变.同时...