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Phonon Quasidiffusion in Cryogenic Dark Matter Search Large Germanium Detectors
Phonon Quasidiffusion Cryogenic Dark Matter Large Germanium Detectors
2011/8/5
Abstract: We present results on quasidiffusion studies in large, 3 inch diameter, 1 inch thick [100] high purity germanium crystals, cooled to 50 mK in the vacuum of a dilution refrigerator, and expos...
High Speed Energy-Efficient Germanium Electro- absorption Modulator Featuring Monolithic Integration with Germanium p-i-n Photodetector
Optical devices Modulators
2015/5/26
We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm 2 OCIS codes: (230.0230) Optical devices; (230.4110) Modulators giving an extinction ratio...
New paths were designed for the investigations of the-tin!Imma!sh phase transitions in nanocrystalline Ge under conditions of hydrostatic stress. A second-order transition between the-tin andImmapha...
Fabrication and characteristics of porous germanium films
germanium porous structured film visible photoluminescence
2010/1/19
Porous germanium films with good adhesion to the substrate were produced by annealing GeO2 ceramic films in H2 atmosphere. The reduction of GeO2 started at the top of a film and resulted in a Ge layer...
Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects
Three-Dimensional Silicon-Germanium Nanostructures CMOS Compatible Light Emitters Optical Interconnects
2009/5/19
Three-dimensional SiGe nanostructures grown on Si (SiGe/Si) using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important sp...
Influence of high pressure annealing on electrical properties of surface layer of neutron irradiated or germanium-doped Czochralski-grown silicon
germanium-doped silicon neutron-irradiated silicon defects
2011/4/27
The effect of annealing at 720–920 K under enhanced pressure (up to 1.1 GPa) in argon ambient on electrical properties of the surface layer of the Czochralski-grown silicon (Cz-Si) subjected to neutro...
Analysis of nonlinear ultraacoustic wave properties in germanium monocrystal
elastic wave second harmonics dynamic deformations
2010/3/11
The present paper investigates the properties of the second harmonics of monochromatic symmetrical normal waves. The analytical representations for nonharmonic distortion of normal waves with a free p...
A Discussion on the Phonon Density of States of Amorphous Germanium for the Infrared Range
Phonon density of states amorphous germanium infrared range quasiharmonic approximation
2010/12/10
A theoretical formulation for the phonon density of states of amorphous germanium in the infrared range is proposed. This formulation is based upon the quasi-harmonic approximation and is compared wit...
A Small Cluster Approach for the Electronic Density of States in Amorphous Germanium
Electronic density of states amorphous germanium bonding orbitals Born model
2010/12/10
The electronic density of states for very small clusters of amorphous germanium is calculated by using bonding orbitals. In this context, the Born model is considered as well as Pauling-type hybridize...
Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Sputtered Germanium-Doped Indium Tin Oxide Films Low Deposition Temperature
2010/12/16
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. ...